파트넘버.co.kr G6849 데이터시트 PDF


G6849 반도체 회로 부품 판매점

InGaAs PIN photodiode



Hamamatsu Corporation 로고
Hamamatsu Corporation
G6849 데이터시트, 핀배열, 회로
InGaAs PIN photodiodes
G6849 series
Quadrant type
Features
Photosensitive area
G6849 : φ2 mm quadrant element
G6849-01: φ1 mm quadrant element
Low noise
High reliability
Applications
Light spot position detection
Measurement equipment
Structure
Parameter
Photosensitive area
Number of elements
Package
Window material
G6849
φ2/quadrant
4
TO-5
Borosilicate glass
G6849-01
φ1/quadrant
Unit
mm
-
-
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering condition
-
260 °C or less, within 10 s
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefcient of ID
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
ID
ΔTID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=1.55 μm
VR=1 V
VR=1 V
VR=1 V, RL=50 Ω
λ=1.3 μm, -3 dB
VR=1 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
Min.
-
-
0.8
0.85
-
-
15
-
10
1 × 1012
-
G6849
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.5
1.09
30
100
50
5 × 1012
2 × 10-14
Max.
-
-
-
-
5
-
-
160
-
-
6 × 10-14
Min.
-
-
0.8
0.85
-
-
G6849-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.15
1.09
Max.
-
-
-
-
1.5
-
Unit
μm
μm
A/W
nA
times/°C
80 120 - MHz
-
80
1 × 1012
-
25
200
5 × 1012
1 × 10-14
40
-
-
4 × 10-14
pF
MΩ
cm·Hz1/2/W
W/Hz1/2
The G6849 series may be damaged by Electro Static Discharge. Be carefull when using the G6849 series.
www.hamamatsu.com
1


G6849 데이터시트, 핀배열, 회로
InGaAs PIN photodiodes
G6849 series
Spectral response
1
(Typ. Ta=25 °C)
0.8
0.6
0.4
0.2
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Wavelength (µm)
KKIRDB0002EB
Photosensitivity temperature characteristics
2 (Typ. Ta=25 °C)
1
0
-1
0.8
1.0 1.2 1.4 1.6 1.8
Wavelength (µm)
KIRDB0042EA
Dark current vs. reverse voltage
1 µA
(Typ. Ta=25 °C)
100 nA
10 nA
1 nA
G6849
100 pA
10 pA
0.01
G6849-01
0.1 1 10
Reverse voltage (V)
100
KMIRB0016EC
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
1 nF
100 pF
G6849
10 pF
1 pF
0.01
G6849-01
0.1 1
Reverse voltage (V)
10
KMIRB0015EC
2




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G6849 diode

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