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RLT83500G 반도체 회로 부품 판매점

High Power Infrared Laser diode



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Roithner
RLT83500G 데이터시트, 핀배열, 회로
RLT83500G
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength: 830 nm typ.
Max. optical power: 500 mW, cw
Emitting Aperture: 1x50 μ
Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
Specification (Tc = 25°C)
CHARACTERISTIC
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Slope Efficiency
Series Resistance
Central Wavelength
Spectral Width
Wavelength Temperature Coefficient
Beam Divergence
Beam Divergence
Monitor Current
Polarization
Reverse Voltage
Operating Temperature
Storage Temperature
MIN
0.5
0.25
0.95
2.1
0.80
0.80
830 ±10
3
0.3
10
40
400 – 1000
TE
2.0
10 - 30
-10 – 70
03.08.2010
rlt83500g.doc
UNIT
W
A
A
V
W/A
nm
nm
nm/°C
deg
deg
mA
V
°C
°C
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RLT83500G 데이터시트, 핀배열, 회로
PACKAGE DIMENSIONS:
Operating notes:
1. Be sure that the operating current is not exceed the specified operating current, or
else which will accelerate aging, shorten lifetime or even damage devices.
2. Increase the current gradually to the specified operating value. For shutting down the
laser diode, please decrease the current to zero gradually, and then turn off the
power. Pleaser sure that the power supply have no current overshoot at any time.
The current overshoot can damage the laser diodes.
3. The high power laser diode is sensitive to the work temperature. The work
temperature should be no more than 30°C. It is better if the temperature of the heat
sink can be keep at 20°C.
4. Be careful to keep the facet cleaning. Contamination of facet will result in rapid
degradation of devices.
5. The high power laser diode is very sensitive to static. Please caution about static
during operating with the laser diode.
6. Caution! Don’t look at the laser light directly, because it’s harmful to eyes.
7. A clean, dry and ventilated environment should be available when storing and
operation. Dew can damage the laser diodes.
8. The storage temperature is between –10 and 70°C.
03.08.2010
rlt83500g.doc
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RLT83500G diode

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