(PDF) RLT8340MG Datasheet - High Power Infrared Laser diode

Número de pieza	RLT8340MG
Descripción	High Power Infrared Laser diode
Fabricantes	Roithner
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No Preview Available ! ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: [email protected] http://www.roithner-laser.com RLT8340MG TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs double heterostructure Lasing wavelength: 830 nm typ. Max. optical power: 40 mW, single mode Package: 5.6 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode NOTE! LASERDIODE MUST BE COOLED! Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature Po VR(LD) VR(PD) Top Tstg RATING 40 2 30 -10 .. +50 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Threshold Current Operation Current Operation Voltage Lasing Wavelength Beam Divergence Beam Divergence Monitor Current Ith cw 15 25 Iop Po = 40 mW 70 80 90 Vop Po = 40 mW 1.8 2.2 λp Po = 40 mW 820 830 840 θ// Po = 40 mW 8 10 11 θ⊥ Po = 40 mW 25 31 40 Im Po = 40 mW, Vr=5V 400 600 800 UNIT mA mA V nm ° ° µA 1 page

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PDF RLT8340MG Data sheet ( Hoja de datos )