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Roithner |
RLT760-10G
v 1.1 04.08.2013
Description
RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at
room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in
monitor PD.
Maximum Ratings
Parameter
Optical Output Power
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
PO
TCASE
TSTG
TSOLD
Min.
-20
-40
Values
Max.
10
+60
+85
180
Unit
mW
°C
°C
°C
Specifications
Parameter
Central Wavelength
Optical Output Power
Emitting Area
Threshold Current
Forward Current
Forward Voltage
Beam Divergence
Beam Divergence
Spectral Width (FWHM)
Static Alignment
Positional Accuracy
Mode Structure
Slope Efficiency
Monitor Current
Symbol
λC
PO
WxH
ITH
IOP
UOP
ӨII
Ө┴
Δλ
Δa II x
ΔX, ΔY, ΔZ
η
IM
Min.
755
-
30
150
1.5
8
25
1.0
-
-
-
0.07
Values
Typ.
760
10
3 x 1.5
40
200
2.0
10
30
2.0
-
-
SM
0.5
0.4
Max.
765
-
50
250
2.2
12
35
5.0
< ±3
±100
-
0.8
Unit
nm
mW
µm
mA
mA
V
deg.
deg.
nm
deg.
µm
-
mW/mA
mA
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Electrical Connection
Lead
PIN 1
PIN 2
PIN 3
Description
PD Cathode
PD Anode, LD Cathode
LD Anode
Drawing
Bottom View
All dimensions in mm
Mounting Instruction
In order to maintain lifetime and stability of the laser diode it is essential to provide efficient heat
management. Heat dissipation is possible through the base plate only. For long time stable operation
proper contact between laser diode base plate and heat sink is mandatory.
Safety Advice
This laser module emits highly concentrated ultra violet light which can be hazardous to the human eye. This
module is classified as Class 3B laser product according to IEC 60825-1 and 21 CFR Part 1040.10 Safety
Standards. Actual laser light emitted and precautions necessary strongly depend on mode of operation.
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The above specifications are for reference purpose only and subjected to change without prior notice
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