|
ETC |
QL63D5SA
InGaAlP Laser Diode
2002
♦ OVERVIEW
QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices
such as Optical Leveler and Modules.
♦ APPLICATION
Pointer
Optical Leveler
Laser Module
♦ FEATURES
Visible Light Output: λp = 635 nm (TM Mode)
Optical Power Output: 5 mW CW
Package Type: TO-18
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
♦ ABSOLUTE MAXIMUM RATING at Tc = 25° C
Items
Optical Output Power
Laser Diode Reverse
Voltage
Photo Diode Reverse
Voltage
Operating Temperature
Storage Temperature
Symbols
P
V
V
Topr
Tstg
Values
7
2
30
-10 ... +50
-40 ... +85
Unit
mW
V
V
°C
°C
♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc = 25° C
Items
Symbols
Min. Typ. Max. Unit
Condition
Optical Output Power
Po
- 5 - mW
-
Threshold Current
Ith - 35 50 mA
-
Operating Current
Iop
- 45 60 mA
Po = 5 mW
Operating Voltage
Lasing Wavelength
Beam Divergence
Beam Angle
Vop
λp
θII
θ⊥
∆θ II
∆θ⊥
- 2.2 2.7 V
630 635 640
nm
6 8 15 deg
22 35 40 deg
- - 4.5 deg
--
2.5 deg
Po = 5 mW
Po = 5 mW
Po = 5mW
Po = 5 mW
Po = 5 mW
Po = 5 mW
Monitor Current
Optical Distance
Im
∆X,∆Y,∆Z
0.1 0.2
--
0.5 mA
60 µm
Po = 5 mW
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