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BAT24-02LS 반도체 회로 부품 판매점

Silicon Schottky Diode



Infineon Technologies 로고
Infineon Technologies
BAT24-02LS 데이터시트, 핀배열, 회로
Silicon Schottky Diode
RF Schottky diode for mixer applications
up to 26 GHz
Extremely low inductance combined with
ultra low device capacitance
Very stable performance for all major parameters
Package size: 0.62 x 0.31 x 0.31 mm³ only
Pb-free (RoHS compliant) package
BAT24-02LS
BAT24-02LS
12
Type
BAT24-02LS
Package Configuration
TSSLP-2-1 single, leadless
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 73 °C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
LS(nH) Marking
0.2 ±0.05 S
Value
4
110
100
Unit
V
mA
mW
150
-55 ... 150
-55 ... 150
°C
Value
770
Unit
K/W
1 2011-06-15


BAT24-02LS 데이터시트, 핀배열, 회로
BAT24-02LS
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 1 V
Forward voltage
IF = 1 mA
IF = 10 mA
V(BR)
IR
VF
4 - -V
- - 5 µA
V
0.16 0.23 0.32
0.25 0.32 0.41
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 10 mA / 50 mA
CT - 0.2 0.23 pF
RF - 8 10
2 2011-06-15




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BAT24-02LS diode

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BAT24-02LS

Silicon Schottky Diode - Infineon Technologies