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Infineon Technologies |
Silicon Schottky Diode
• RF Schottky diode for mixer applications
up to 26 GHz
• Extremely low inductance combined with
ultra low device capacitance
• Very stable performance for all major parameters
• Package size: 0.62 x 0.31 x 0.31 mm³ only
• Pb-free (RoHS compliant) package
BAT24-02LS
BAT24-02LS
12
Type
BAT24-02LS
Package Configuration
TSSLP-2-1 single, leadless
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS ≤ 73 °C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
LS(nH) Marking
0.2 ±0.05 S
Value
4
110
100
Unit
V
mA
mW
150
-55 ... 150
-55 ... 150
°C
Value
≤ 770
Unit
K/W
1 2011-06-15
BAT24-02LS
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 1 V
Forward voltage
IF = 1 mA
IF = 10 mA
V(BR)
IR
VF
4 - -V
- - 5 µA
V
0.16 0.23 0.32
0.25 0.32 0.41
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 10 mA / 50 mA
CT - 0.2 0.23 pF
RF - 8 10 Ω
2 2011-06-15
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