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PDF L7060-02 Data sheet ( Hoja de datos )
| Número de pieza | L7060-02 | |
| Descripción | HIGH-POWER INFRARED PULSED LASER DIODE | |
| Fabricantes | Hamamatsu Corporation | |
| Logotipo |  |
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HIGH-POWER
INFRARED PULSED LASER DIODE
L7060-02
FEATURES
High output power ( ep 30W)
High speed rise time (tr=0.5 ns typ.)
APPLICATIONS
Laser rader
Range finder
Excitation light source
Optical trigger
Security barrier
Figure 1: Dimensional Outline (Unit: mm)
5.4 +0.05
-0.1
LD Chip
4.6 0.2
3.0 0.2
1.2 Max.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value
Pulsed Foward Current
IFP 35
Reverse Voltage
VR 2
Pulsed Radiant Output Power
Pulse Duration (FWHM)
ep
tw
40
100
Duty Ratio
Operating Temperature
DR 0.075
Top -30 to +85
Storage Temperature
Tstg -40 to +125
Unit
A
V
W
ns
%
0.45
2.54
Cathode
(Common to Case)
Anode
Side View
(Pin Connection)
45
Bottom View
Anode
Cathode
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 )
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Symbol
ep
p
Condition
IFP=30A
VF IFP=30A
tr
FWHM
IFP=30A
Ith
Min.
30
-
-
-
-
-
-
-
Typ.
-
870
4
7
0.5
9
30
1
Note: General operating condition ep W, tw 0 ns, Repetition frequency kHz
Max.
-
-
-
-
-
-
-
-
Unit
W
nm
nm
V
ns
degree
degree
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. C 1998 Hamamatsu Photonics K.K.
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