파트넘버.co.kr BAS21TM 데이터시트 PDF


BAS21TM 반도체 회로 부품 판매점

SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY



Diodes 로고
Diodes
BAS21TM 데이터시트, 핀배열, 회로
Features
Fast Switching Speed: max. 50ns
Continuous Reverse Voltage: max. 200V
Repetitive Peak Reverse Voltage: max. 250V
Repetitive Peak Forward Current: max. 1A
Small Surface Mount Package
For General Purpose Switching Applications
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Notes 2 and 3)
BAS21TM
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper Alloy
leadframe (Lead Free Plating). Solderable per MIL-STD-202,
Method 208
Orientation: See Diagram
Weight: 0.009 grams (approximate)
SOT26
Top View
Top View
Internal Schematic
Ordering Information (Notes 3)
Notes:
Part Number
BAS21TM-7
Case
SOT26
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
XJJ
XJJ = Product Type Marking Code
YM = Date Code Marking
Y =Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
Month
Code
Jan
1
Feb
2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun
6
2015
C
Jul Aug
78
2016
D
Sep
9
2017
E
Oct Nov
ON
2018
F
Dec
D
BAS21TM
Document number: DS35388 Rev. 3 - 2
1 of 4
www.diodes.com
January 2012
© Diodes Incorporated


BAS21TM 데이터시트, 핀배열, 회로
BAS21TM
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current
@ t = 10μs
@ t = 100μs
@ t = 10ms
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
250
250
177
200
250
10
6
2
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
250
Max
1.0
1.25
100
100
5
50
Unit
V
V
nA
μA
pF
ns
Test Condition
IR = 100μA
IF = 100mA
IF = 200mA
VR = 200V
VR = 200V, TJ = 150°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100
Notes:
4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.5.
Short duration pulse test used to minimize self-heating effect.
300
250
Note 4
200
150
100
50
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
1,000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
BAS21TM
Document number: DS35388 Rev. 3 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated




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BAS21TM diode

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