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Dynex Semiconductor |
MP04---490
Replaces Jun3 2000 version, DS5204-1.2
FEATURES
s Dual Device Module
s Electrically Isolated Package
s Pressure Contact Construction
s International Standard Footprint
s Alumina (Non Toxic) Isolation Medium
s Integral Water Cooled Heatsink
APPLICATIONS
s Motor Control
s Controlled Rectifier Bridges
s Heater Control
s AC Phase Control
MP04---490
Dual Thyristor, Thyristor/Diode Module
Advance Information
DS5204-2.1 April 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM(per arm)
Visol
2800V
490A
11250A
3000V
Code
HBT
HBP
HBN
Circuit
Fig.1 Circuit diagrams
VOLTAGE RATINGS
Type Number
MP04---490-28
MP04---490-26
MP04---490-24
Repetitive Peak
Voltages
VDRM VRRM
V
2800
2600
2400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA
V =V =
DSM
RSM
V = V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
Order As:
MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24
MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24
MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24
Note: When ordering, please use the whole part number.
Module type code: MP04.
For further information see Package Details.
Fig. 2 Electrical connections - (not to scale)
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MP04---490
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV)
IT(RMS
ITSM
I2t
ITSM
I2t
Visol
Mean on-state current
Half wave resistive load
Tcase = 75˚C
Tcase = 85˚C
RMS value
Tcase = 75˚C
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
I2t for fusing
V =0
R
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
I2t for fusing
VR = 50% VDRM
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
490 A
420 A
770 A
11.25 kA
633 x 103 A2s
9 kA
506 x 103 A2s
3000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R
th(j-c)
Thermal resistance - junction to water
(per thyristor or diode)
Rth(c-hs)
T
vj
Tstg
-
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
- Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Min. Max. Units
- 0.056 ˚C/kW
- 0.060 ˚C/kW
- 0.066 ˚C/kW
- 0.02 ˚C/kW
- 125 ˚C
–40 130
˚C
- 6 (35) Nm (lb.ins)
- 12 (106) Nm (lb.ins)
- 1580 g
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