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ROHM Semiconductor |
Schottky Barrier Diode
RB060MM-60
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±0.1
0.05
lLand Size Figure (Unit : mm)
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf11..5555±00.0.055
lStructure Cathode
Anode
0.25±0.05
1.81±0.1
4.0±0.1
fφ11.0.0±0.01.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
60 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Io
Glass epoxi mounted, 60Hz half sin Wave
resistive load, Tc=55°C max.
Non-repetitive Forward Current Surge Peak IFSM 60Hz half sin wave ,Non-repetitive at Ta=25°C
60
2
30
V
A
A
Operating Junction Temperature
Tj
-
150 °C
Storage Temperature
Tstg
- -40 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=1.0A
IF=2.0A
VR=60V
Min. Typ. Max. Unit
- - 0.52 V
- - 0.61 V
- - 50.0 mA
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.08 - Rev.A
RB060MM-60
lElectrical Characteristic Curves
Data Sheet
10000
1000
100
Tj = 150°C
Tj = 125°C
Tj = 75°C
10 Tj = 25°C
1 Tj = -25°C
0.1
0 100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
Tj = 150°C
1000
100
10
Tj = 125°C
Tj = 75°C
1 Tj = 25°C
0.1
0.01
0.001
0
Tj = -25°C
10 20 30 40 50
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
60
1000
Tj = 25°C
f = 1MHz
800
750
700
Tj=25°C
IF=2A
n=30pcs
650
100 600 AVE. : 541mV
550
500
450
10
0
400
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.08 - Rev.A
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