(PDF) YG812S04R Datasheet - SCHOTTKY BARRIER DIODE

Número de pieza	YG812S04R
Descripción	SCHOTTKY BARRIER DIODE
Fabricantes	Fuji Electric
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No Preview Available ! YG812S04R Schottky Barrier Diode http://www.fujisemi.com FUJI Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage VRRM Isolating voltage Viso Average forward current IFAV Non-repetitive forward surge current Operating junction temperature Storage temperature IFSM Tj Tstg Conditions tw=500ns, duty=1/40 - Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 124˚C Sine wave, 10ms 1shot - - Ratings 48 45 1500 10 120 150 -40 to +150 Units V V V A A ˚C ˚C Electrical characteristics Item Forward voltage Reverse current Thermal resistance (at Ta=25˚C unless otherwise specified.) Symbols Conditions VF IF =10 A IR VR =VRRM Rth(j-c) Junction to case Maximum 0.6 2.0 2.5 Units V mA ˚C/W Mechanical characteristics Item Mounting torque Approximate mass Conditions Recommended torque - Maximum 0.3 to 0.5 1.7 Units N•m g 1 1 page YG812S04R 102 Transient Thermal Impedance (max.) FUJI Diode http://www.fujisemi.com 101 Rth(j-c):2.5°C/W 100 10-1 10-3 10-2 10-1 100 101 102 T Time (s) 5 5 Page

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PDF YG812S04R Data sheet ( Hoja de datos )