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YG811S09R 반도체 회로 부품 판매점

SCHOTTKY BARRIER DIODE



Fuji Electric 로고
Fuji Electric
YG811S09R 데이터시트, 핀배열, 회로
YG811S09R
SCHOTTKY BARRIER DIODE
(90V / 5A TO-22OF15)
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1.2±0.2
0.7±0.2
5.08±0.4
JEDEC
EIAJ
0.6±0.2
2.7±0.2
SC-67
Connection Diagram
13
Item
Symbol
Conditions
Rating
Repetitive peak reverse voltage
VRRM
90
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave
Sine wave 10ms
100
1500
5
80
Operating junction temperature
Tj
-40 to +150
Storage temperature
Tstg
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=4.0A
Reverse current
IR VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Mechanical Characteristics
Max.
0.9
5.0
5.0
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
N·m
g


YG811S09R 데이터시트, 핀배열, 회로
(90V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10 Tj=150 o C
Tj=125 o C
Tj=100 o C
1
Tj=25 o C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage (V)
Forward Power Dissipation
8
Io
7
λ
6
360°
5
Square wave λ=60o
4
Square wave λ=120o
Sine wave λ=180o
Square wave λ=180o
3 DC
2
1
Per 1element
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130 DC
120
110
100
90
80
360°
λ
Io
VR=50V
Sine wave λ=180o
Square wave λ=180o
Square wave λ=120o
Square wave λ=60o
70
01234567
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
YG811S09R
Reverse Characteristic (typ.)
102
101
100
Tj=150 oC
Tj=125 oC
Tj=100oC
10-1
10-2
Tj=25oC
10-3
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
20
18
360°
16
VR
14
α
12
DC
10 α=180o
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
10
10
100
VR Reverse Voltage (V)




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YG811S09R diode

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