(PDF) NR6300EZ Datasheet - 30um InGaAs AVALANCHE PHOTO DIODE

Número de pieza	NR6300EZ
Descripción	30um InGaAs AVALANCHE PHOTO DIODE
Fabricantes	California Eastern Labs
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No Preview Available ! PHOTO DIODE NR6300EZ  30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES • Small dark current • Small terminal capacitance • High sensitivity • High speed response • Detecting area size ID = 5 nA Ct = 0.35 pF @ 0.9 V(BR)R S = 0.94 A/W @  = 1 310 nm, M = 1 fC = 2.5 GHz MIN. @  = 1 310 nm, M = 10  30 m Document No. PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS The mark  shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 1 page  TYPICAL CHARACTERISTICS (TC = 25C, unless otherwise specified) NR6300EZ Remark The graphs indicate nominal characteristics. Data Sheet PL10701EJ02V0DS 5 5 Page

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