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PDF KS05B4 Data sheet ( Hoja de datos )

Número de pieza KS05B4
Descripción Ulta Low Capacitance double rail-to-rail ESD protection diode
Fabricantes SeCoS Halbleitertechnologie 
Logotipo SeCoS Halbleitertechnologie Logotipo



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KS05B4
Elektronische Bauelemente
VOLTAGE: 5.0V
Ulta Low Capacitance double rail-to-rail ESD protection diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION
. Low Capacitance rail-to-rail ESD protection in a small package designed to protect.
two hi-speed data line or high-frequency signal lines from the damage caused by
ESD and other transients.
FEATURES
. Response time is typically < 1 ns
. Low leakage
. Stand-off voltage:5.0V
. IEC61000-4-2 level 4 ESD protection
. Ulta Low Capacitance : 1pF (I/O to ground)
SOT-143
.075(1.90)
Ref
.018(0.45)
.014(0.35)
.033(0.84)
.030(0.76)
.071(1.80)
.063(1.60)
.118(3.00)
.110(2.80)
.023Re f
(0.57)Re f
.100(2.55)
.089(2.25)
(0.40)Ref
.016 Ref
10o
0o
.055(1.40)
.047(1.20)
.006(0.16)
.003(0.08)
.004(0.10)
.000(0.00)
.051(1.30)
.039(1.00)
.043(1.10)
.035(0.90)
APPLICATION
. Digital Video Interface (DVI)/ High Definition Multimedia Interface (HDMI) interfaces.
. Wide Area Network (WAN)/ Local Area Network(LAN) systems.
. Cellular phones, MP3 players, digital cameras ... etc.
. Suitable for electronics where board space is a major design consideration.
MAXIMUM RATINGS
Rating 25 oC ambient temperature unless otherwise specified.
PARAMETER
IEC61000-4-2, Level 4(ESD)
Air
Contact
Lead Solder Temperature - Max. (10 sec duration)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VESD
TL
TJ
TSTG
Dimensions in inches and (millimeters)
43
1
LIMITS
>16
>8
260
-55 ~ +125
-55 ~ +125
2
UNITS
kV
oC
oC
oC
Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above
the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
ELECTRICAL CHARACTERISTICS (T= 25 oC unless otherwise noted, Per Diode)
PARAMETER
Reverse Stand-Off Voltage
Reverse Leakage Current
Breakdown Voltage
Diode Capacitance
Forward Voltage
SYMBOL
VRWM
IR
VBR
Cz
CI/O
VF
Min. Typ.
--
--
6.1 -
-1
- 36
- 0.7
Max.
5.0
100
8.5
-
-
-
UNIT
V
nA
V
pF
V
TEST CONDITIONS
VRWM = 3 V
IT = 1mA
F=1MHz,VR=0V , Pin 2,3 to Pin1
F=1MHz,VR=0V , Pin 4 to Pin1
IF=1mA
http://www.SeCoSGmbH.com/
24-Sep-2007 Rev. B
Any changing of specification will not be informed individual
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