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BAV99LT3G 반도체 회로 부품 판매점

Dual Series Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAV99LT3G 데이터시트, 핀배열, 회로
BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (Each Diode)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
VR
IF
IFM(surge)
VRRM
IF(AV)
100
215
500
70
715
Vdc
mAdc
mAdc
V
mA
Repetitive Peak Forward Current
NonRepetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFRM 450 mA
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation
FR5 Board (Note 1) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, JunctiontoAmbient
Junction and Storage
Temperature Range
RqJA
TJ, Tstg
417
65 to
+150
°C/W
°C
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 9
1
http://onsemi.com
CASE 318
SOT23
STYLE 11
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
A7 MG
G
1
A7 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAV99LT1G
SBAV99LT1G
BAV99LT3G
SBAV99LT3G
Package
SOT23
(PbFree)
SOT23
(PbFree)
SOT23
(PbFree)
SOT23
(PbFree)
Shipping
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAV99LT1/D
http://www.Datasheet4U.com


BAV99LT3G 데이터시트, 핀배열, 회로
BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage,
(I(BR) = 100 mA)
Reverse Voltage Leakage Current,
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance,
(VR = 0, f = 1.0 MHz)
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time,
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns)
Symbol
V(BR)
IR
CD
VF
trr
VFR
Min
100
Max
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
mAdc
pF
mVdc
ns
V
CURVES APPLICABLE TO EACH DIODE
1000
100
100 TA = 150°C
TA = 125°C
10 TA = 85°C
TA = 55°C
1 TA = 25°C
TA = 40°C
0.1
0
TA = 55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40 50 60 70
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
012345678
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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Dual Series Switching Diode - ON Semiconductor