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BAS16N3 반도체 회로 부품 판매점

High speed switching diode



CYStech Electronics 로고
CYStech Electronics
BAS16N3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
High –speed switching diode
BAS16N3
Spec. No. : C303N3-A
Issued Date : 2005.12.02
Revised Date : 2013.09.27
Page No. : 1/6
Description
The BAS16N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in
a small SOT-23 plastic SMD package.
Equivalent Circuit
Outline
BAS16N3
21
SOT-23
Cathode
3
1Anode
2Not Connected
3Cathode
Anode
NC
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 500mA.
Applications
High-speed switching in hybrid thick and thin-film circuits.
Ordering Information
Device
BAS16N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BAS16N3
CYStek Product Specification
http://www.Datasheet4U.com


BAS16N3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25
Parameters Sym
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current (Note 1)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=25prior to surge t=1μs
t=1ms
t=1s
Total power dissipation (Note 1) Ptot
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
bol
VRRMB B
VR
IFB B
IFRM
IFSM
TjB B
TstgB B
Min
-
-
-
-
-
-
-
-65
Spec. No. : C303N3-A
Issued Date : 2005.12.02
Revised Date : 2013.09.27
Page No. : 2/6
Max
110
100
215
500
4
1
0.5
250
150
+150
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
Electrical Characteristics @ Tj=25unless otherwise specified
Parameters Sym
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
bol
Conditions
Min Typ. Max Unit
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
VR=25V
IR
VR=100V
VR=25V,Tj=150
VR=100V,Tj=150
715 mV
--
855 mV
1V
1.25 V
30 nA
--
1 μA
30 μA
50 μA
Cd VR=0V, f=1MHz
- - 1.5 pF
when switched from IF=10mA to
trr IR=10mA,RL=100, measured - -
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
--
4 ns
1.75 V
Thermal Characteristics
Symbol
Rth,j-c
Rth, j-a
Parameter
thermal resistance from junction to case
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
Conditions
Note 1
Value
330
500
Unit
/W
/W
BAS16N3
CYStek Product Specification




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BAS16N3 diode

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High speed switching diode - CYStech Electronics