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BAR40AS3 반도체 회로 부품 판매점

Small Signal Schottky (double) diodes



CYStech Electronics 로고
CYStech Electronics
BAR40AS3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Small Signal Schottky (double) diodes
BAR40S3/BAR40AS3
BAR40CS3/BAR40SS3
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 1/7
Description
Planar silicon Schottky barrier diodes encapsulated in a SOT-323 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
Very small conduction losses
Low forward voltage drop
Small plastic SMD package
Pb-free package
Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Pinning
Pin
BAR40
1A
2 NC
3K
Description
BAR40A BAR40C
K1 A1
K2 A2
A1,A2
K1,K2
BAR40S
A1
K2
K1,A1
Outline
SOT-323
3
33
1
(1) BAR40
3
2
N.C.
12
(2)BAR40A
3
1
(3)BAR40C
2
1
(4)BAR40S
2
Diode configuration and symbol
2
1
Marking:
Type
BAR40 S3
BAR40AS3
BAR40CS3
BAR40SS3
Marking Code
B4
B7
5C
B8
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 C
YStek Product Specification
http://www.Datasheet4U.com


BAR40AS3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 2/7
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature Tstg.................................................................................................... -65~+150 °C
Junction Temperature Tj .......................................................................................................-55~ +125°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 200 mW
Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp1s,duty cycle0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note: for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Reverse Leakage Current (Note 2)
Diode Capacitance
Reverse Recovery Time
Symbol
VBR
VF(1)
VF(2)
VF(3)
IR
CD
trr
Notes: 1.pulse test, tp=380μs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
Condition
IR=100μA
IF=1mA
IF=40mA
IF=100mA
VR=30V, Tj=25
VR=1V, f=1MHz
IF=IR=10mA RL=100Ω
measured at IR=1mA
Min. Max. Unit
40 - V
- 320 mV
- 500 mV
- 550 mV
- 200 nA
- 10 pF
- 5 ns
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3 C
YStek Product Specification




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BAR40AS3 diode

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Small Signal Schottky (double) diodes - CYStech Electronics