파트넘버.co.kr 2651E 데이터시트 PDF


2651E 반도체 회로 부품 판매점

Broadband Photodiode



EMCORE 로고
EMCORE
2651E 데이터시트, 핀배열, 회로
2651A/2651E Broadband Photodiode
DATASHEET | FEBRUARY 2012
Applications
Forward-Path and Return-Path
Broadband Video Transport
FTTx Receivers
EDFA and Network Monitors
Features
Low Cost Package
Low Capacitance, < 0.4 pF
Low Dark Current < 50 nA at +85C
1 GHz Flat Response, + 0.5 dB
Extended Bandwidth Option
High Responsivity
- > 0.90 A/W at 1310 nm, typ.
- > 0.98 A/W at 1550 nm, typ.
RoHS Compliant
FIBER OPTICS
The 2651 provides the proven high performance of EMCORE’s photodiode
technology in a very practical, cost-effective package. The 2651A features high
linearity and low capacitance over a 1 GHz bandwidth. The extended bandwidth
2651E offers high linearity and low capacitance up to 3 GHz. These broadband
photodiodes are housed in a small, environmentally rugged coaxial package.
The 2651 broadband photodetector is designed to provide the performance and
flexibility needed to meet the expanding applications of two-way communications
networks. This photodiode is used today in forward-and return-path applications,
including AM-VSB CATV, QAM 64/256, PON, FTTC and FTTH receivers.
The 2651A and 2651E photodiodes are compliant with all criteria of the Restriction
of the Use of Hazardous Substances in Electrical and Electronic Equipment
(RoHS) guidelines 2002/95/EC
Performance Highlights
Operating Case Temperature
Wavelength
Responsivity, 1310 nm
1550 nm
Dark Current, 25C
85C
Capacitance -
Bandwidth, 2651A
2651E
Gain Flatness, < 1 GHz
Gain Up-Tilt, 2651E, 1 GHz to 3 GHz
DSO, 2651A/E, < 1 GHz
2651A/E, 1 GHz – 3 GHz
DTB, 2651A/E, < 1 GHz
2651E, 1 GHz – 3 GHz
Bias Voltage
Min
-40
1100
-
-
-
-
-
-
-
2
-
-
-
-
10
Typ
25
-
0.90
0.98
-
-
0.35
-
-
-
-
-
-
-
-
12
Max
+85
1600
-
-
5
50
0.4
1000
3000
1.0
4
-75
-65
-85
-75
15
Units
C
nm
A/W
nA
pF
MHz
dBp-p
dB
dBc
dBc
V
| REV 2012.02
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.
http://www.Datasheet4U.com


2651E 데이터시트, 핀배열, 회로
2651A/2651E Broadband Photodiode
DATASHEET | FEBRUARY 2012
FIBER OPTICS
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress
ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect
device reliability.
Parameter
Operating Temperature Range
Storage Temperature Range
Input Power Saturation
Reverse Voltage
Forward Current
Symbol
Top
Tstg
PIN
VR
IF
Min
-40 85
-40
- 10
-
- 10
Max
85
30
Unit
°C
°C
mW
V
mA
DC/Optical Characteristics
Parameter
Wavelength -
Responsivity
Dark Current
Capacitance
Optical Return Loss
Bias Voltage
Fiber Buffer
Fiber Core / Cladding
Condition
1310 nm
1550 nm
25C
85C
-
-
-
-
Min
1100
0.85
0.95
-
-
-
-
10
-
-
Typ
-
0.90
0.98
-
-
0.35
-
12
900
9/125
Max
1600
-
-
5
50
0.4
-40
15
-
-
Unit
nm
A/W
nA
pF
dB
V
m
m
RF Characteristic
Parameter
Condition
Min Typ Max Unit
Frequency Range1
2651A
2651E
-
-
-
-
1000
3000
MHz
Frequency Response1
2651A/E, peak-to-valley, < 1 GHz - - 1 dB
Frequency Response1
2651E up-tilt gain2 2
- 4 dB
DSO1,3
2651A/E, 1310 nm, two tone test
2651E, 1310 nm, two tone test4
-
-
-
-
-75
-65
dBc
DTB1,3
2651A/E, 1310 nm, two tone test
2651E, 1310 nm, two tone test4
-
-
-
-
-85
-75
dBc
1. Characterized with resistive load of 75.
2. 1 GHz to 3 GHz.
3. Each test laser has 40% OMI. Distortion products are measured at 81, 449, 600, 850. Optical Pin = 0 dBm. Vpd = 12V.
4. Additional test frequencies of 1500, 2000, and 2500 MHz
| REV 2012.02
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.




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2651E diode

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