DSEI30-10AR 반도체 회로 부품 판매점
Fast Recovery Epitaxial Diode
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 IXYS |
Fast Recovery
Epitaxial Diode (FRED)
DSEI 30
IFAVM = 30 A
VRRM = 1000 V
trr = 35 ns
VRSM
V
1000
1000
VRRM
V
1000
1000
Type
DSEI 30-10A
DSEI 30-10AR
AC
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM ÿÿx
IFRM
IFSM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I2t TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ
TVJM
Tstg
Ptot
Md *
FC
VISOL **
TC = 25°C
Mounting torque
mounting force with clip
50/60 Hz, RMS, t = 1 minute, leads-to-tab
Weight
* Verson A only; ** Version AR only
70
30
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
138
0.8...1.2
20...120
2500
6
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
°C
°C
°C
W
Nm
N
V~
g
Symbol
Test Conditions
Characteristic Values
typ. max.
IR TVJ = 25°C VR = VRRM
TVJ = 25°C VR = 0.8 • VRRM
TVJ = 125°C VR = 0.8 • VRRM
750
250
7
VF
IF = 36 A;
TVJ = 150°C
TVJ = 25°C
2
2.4
VT0 For power-loss calculations only
rT TVJ = TVJM
1.5
12.5
RthJC
RthCK
RthJA
0.9
0.25
35
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C 35
50
IRM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms
16 18
L £ 0.05 mH; TVJ = 100°C
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
TO-247 AD
Version A
ISOPLUS 247TM
Version AR
CC
A
C (TAB)
A = Anode, C = Cathode
A
Isolated
back surface
* Patent pending*
Features
q International standard package
JEDEC TO-247 AD
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low I -values
RM
q Soft recovery behavior
q Epoxy meets UL 94V-0
q Version AR isolated and
UL registered E153432
Applications
q Antiparallel diode for high frequency
switching devices
q Anti saturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
q Operating at lower temperature or
space saving by reduced cooling
1-2
Free Datasheet http://www.Datasheet4U.com
DSEI 30, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di /dt.
F
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Dimensions
Fig. 6 Peak forward voltage
versus diF/dt.
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 2.2 2.54
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2-2
Free Datasheet http://www.Datasheet4U.com
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DSEI30-10AR diode
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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관련 데이터시트
DSEI30-10A
Fast Recovery Epitaxial Diode - IXYS
DSEI30-10AR
Fast Recovery Epitaxial Diode - IXYS