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centralsemi |
PROCESS CPD109R
Schottky Diode
Low VF Schottky Diode Chip
PROCESS DETAILS
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
8.3 x 8.3 MILS
3.9 MILS
5.4 x 5.4 MILS
Al - 20,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
251,364
PRINCIPAL DEVICE TYPE
CFSH01-30L
w w w. c e n t r a l s e m i . c o m
R0 (13-April 2011)
http://www.Datasheet4U.com
PROCESS CPD109R
Typical Electrical Characteristics
w w w. c e n t r a l s e m i . c o m
R0 (13-April 2011)
http://www.Datasheet4U.com
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