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YG865C15R 반도체 회로 부품 판매점

High Voltage Schottky barrier diode



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Fuji
YG865C15R 데이터시트, 핀배열, 회로
YG865C15R (20A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics YG865C15R Units Condition
VRRM 150 V
VF
0.90
V Tc=25°C MAX.
IO 20 A
Features
Low VF
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
(150V / 20A )
[0401]
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1 23
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
12
Rating
3
Unit
Repetitive peak surge reverse voltage VRSM
tw=500ns, duty=1/40
150
V
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
VRRM
Viso
Io
IFSM
Tj
Terminals-to-Case,
AC.1min
Square wave, duty=1/2
Tc=101°C
Sine wave
10ms 1shot
150
1500
20 *
150
+150
V
V
A
A
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VF IFM=10A
0.90 V
Reverse current
Thermal resistance
IR
Rth(j-c)
VR=VRRM
Junction to case
150
1.75
µA
°C/W
Mechanical characteristics
Mounting torque
Recommended torque
0.3 to 0.5
N·m
Approximate mass
2g
Free Datasheet http://www.datasheet4u.net/


YG865C15R 데이터시트, 핀배열, 회로
(150V / 20A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V F Forward Voltage (V)
Forward Power Dissipation (max.)
16
Io
14
λ
12 360°
10 Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
8 Square wave λ=180°
DC
6
4
2
Per 1element
0
0 2 4 6 8 10 12
I o Average Forward Current (A)
YG865C15R (20A)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
101
Tj=100°C
100
10-1 Tj= 25°C
10-2
10-3
0 10 20 30 40 50 60 70 80 90 100110120130140150160
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
20
18 360°
DC
16 VR
14 α
12
10
α =180°
8
6
4
2
0
0 20 40 60 80 100 120 140 160
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
120 DC
110
100
90
360°
80 λ
Io
70 VR=75V
60
Sine wave λ =180°
Square wave λ =180°
Square wave λ =120°
Square wave λ =60°
50
0
5 10 15 20 25 30
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1 10 100 1000
VR Reverse Voltage (V)
Free Datasheet http://www.datasheet4u.net/




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YG865C15R diode

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YG865C15R

High Voltage Schottky barrier diode - Fuji