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FFA60UP30DN 반도체 회로 부품 판매점

Ultrafast Dual Diode



Fairchild Semiconductor 로고
Fairchild Semiconductor
FFA60UP30DN 데이터시트, 핀배열, 회로
FFA60UP30DN
60 A, 300 V, Ultrafast Dual Diode
November 2013
Features
• Ultrafast Recovery, Trr = 55 ns (@IF = 30 A)
Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C)
Reverse Voltage: VRRM = 300 V
Avalanche Energy Rated
RoHS Compliant
Applications
• General Purpose, Free-Wheeling Diode for Motor Application
• SMPS, Power Switching Circuits
Description
The FFA60UP30DN is an ultrafast diode with low forward
voltage drop and rugged UIS capability. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power switching
applications. It is specially suited for use in switching power
supplies and industrial applicationa as welder and UPS
application.
12
3
1 TO-3PN
1. Anode 2. Cathode 3. Anode
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings (per diode) Ta = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 135°C
Ratings
300
300
300
30
300
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
RθJC
Maximum Thermal Resistance, Junction to Case
Ratings
0.53
Unit
V
V
V
A
A
°C
Unit
°C/W
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FFA60UP30DNTU FFA60UP30DN
TO-3P
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
©2005 Fairchild Semiconductor Corporation
FFA60UP30DN Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/


FFA60UP30DN 데이터시트, 핀배열, 회로
Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted
Symbol
Parameter
VF *
IR *
trr
ta
tb
Qrr
WAVL
IF = 30 A
IF = 30 A
VR = 300 V
VR = 300 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V
IF =30 A, diF/dt = 200 A/µs, VR = 195 V
IF =30 A, diF/dt = 200 A/µs, VR = 195 V
Avalanche Energy (L = 20 mH)
TC = 25 °C
TC = 150 °C
TC = 25 °C
TC = 150 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
17
15
50
-
Max.
1.5
1.3
100
500
45
55
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
FFA60UP30DN Rev.C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/




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FFA60UP30DN diode

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FFA60UP30DN

Ultrafast Dual Diode - Fairchild Semiconductor