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Número de pieza | RLT850-100GS | |
Descripción | Laser Diode | |
Fabricantes | Roithner | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RLT850-100GS (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! RLT850-100GS
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• Lasing Mode Structure: single mode
• Peak Wavelength : typ. 852 nm
• Optical Output Power: 100 W
• Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Anode
LD Cathode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
PO
VR(LD)
VR(PD)
TC
Tstg
Value
-20 … +50
-40 … +80
Specifications (TC=25°C)
Item
Symbol
Min.
Typ.
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
PO - 100
λP 847 852
Δλ - 0.5
FWHM Beam Divergence
Emitting Aperature
θ║
θ┴
WxH
-
-
8
28
5x1
Lifetime
100000
-
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Ith - 20
Iop - 120
η 0.9 1.0
Operating Voltage
Vop - 1.9
Monitor Current
Im
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
-
857
2
10
30
-
40
170
-
2.2
Unit
mW
V
V
°C
°C
Unit
mW
nm
nm
deg
deg
µm
hour
mA
mA
W/A
V
mA
12.07.2013
RLT850-100GS
1 of 4
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RLT850-100GS.PDF ] |
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RLT850-100GS | Laser Diode | Roithner |
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