(PDF) RLT808-10MG Datasheet

Número de pieza	RLT808-10MG
Descripción	Laser Diode
Fabricantes	Roithner
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No Preview Available ! RLT808-10MG Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 10 mW CW • Threshold Current : 30 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 10 -10 to +50 -40 to +85 2 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) Slope Efficiency (mW/mA) Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm) λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 803 20 30 1.8 0.1 0.5 8 25 * TYPICAL 808 30 50 2.0 0.4 0.7 10 30 11 MAX. 815 50 70 2.5 0.9 0.9 12 40 * TEST CONDITION Po=10mW Po=10mW Po=10mW Po=10mW Po=10mW, VR=5V *** Po=10mW Po=10mW Po=10mW, NA=0.4 03.08.2010 rlt808_10mg.doc 1 of 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF RLT808-10MG Data sheet ( Hoja de datos )