(PDF) RLT1550-100G Datasheet - Infrared Laser Diode

Número de pieza	RLT1550-100G
Descripción	Infrared Laser Diode
Fabricantes	Roithner
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No Preview Available ! RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm, multi mode Max. optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 100 mW Operation Voltage Vop Po = 100 mW Lasing Wavelength λp Po = 100 mW Spectra halfwidth (FWHM) ∆λ Po = 100 mW Beam Divergence Θ// Po = 100 mW Beam Divergence Θ Po = 100 mW Emitting area Wxd MIN TYP MAX - 100 - 300 400 600 700 800 1000 2.3 2.4 2.5 - 1580 1582 346 8 10 12 43 45 47 - 100x 1 - UNIT mW mA mA V nm nm ° ° µm x µm 04.08.2010 rlt1550_100g.doc 1 of 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF RLT1550-100G Data sheet ( Hoja de datos )