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Ultra Fast Recovery Diode



Renesas 로고
Renesas
RJU3052SDPD-E0 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJU3052SDPD-E0
360V - 20A - Single Diode
Ultra Fast Recovery Diode
R07DS0890EJ0100
Rev.1.00
Oct 29, 2012
Features
Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/s)
Low forward voltage: VF = 1.4 V typ. (at IF = 20 A)
Low reverse current: IR = 1 A max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
2, 4
12 3
13
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
VRM
IF
IFSM
j-c
Tj
Tstg
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol
VF
IR
trr
Min
Typ
1.4
25
Ratings
360
20
80
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
C/W
C
C
(Ta = 25°C)
Max Unit
Test conditions
1.7 V IF = 20 A
1 A VR = 360 V
40 ns IF = 20 A, di/dt = 100 A/s
R07DS0890EJ0100 Rev.1.00
Oct 29, 2012
Page 1 of 3
Free Datasheet http://www.datasheet4u.com/


RJU3052SDPD-E0 데이터시트, 핀배열, 회로
RJU3052SDPD-E0
Main Characteristics
Forward Current vs. Forward Voltage (Typical)
100
Ta = 125°C
10
25°C
1
0.1
0
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage VF (V)
Capacitance vs. Reverse Voltage (Typical)
1000
f = 1 MHz
Ta = 25°C
100
10
1
1 10 100
Reverse Voltage VR (V)
Preliminary
Reverse Recovery Time vs.di/dt (Typical)
50
40
30
20
10
IF = 20 A
Ta = 25°C
0
0 40 80
120 160
di/dt (A/μs)
200
Thermal Impedance vs. Pulse Width
10
1
0.1
100 μ 1 m
Tc = 25°C
Single pulse
10 m 100 m 1
10
Pulse Width PW (s)
R07DS0890EJ0100 Rev.1.00
Oct 29, 2012
Page 2 of 3
Free Datasheet http://www.datasheet4u.com/




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RJU3052SDPD-E0 diode

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Ultra Fast Recovery Diode - Renesas