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RJU3051SDPE 반도체 회로 부품 판매점

Ultra Fast Recovery Diode



Renesas 로고
Renesas
RJU3051SDPE 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJU3051SDPE
360V - 10A - Single Diode
Ultra Fast Recovery Diode
R07DS1067EJ0100
Rev.1.00
Apr 24, 2013
Features
Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
Low forward voltage: VF = 1.4 V typ. (at IF = 10 A)
Low reverse current: IR = 1 μA max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
2, 4
13
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward
current
Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
VRM
IF
IF
IFSM
θj-cd
Tj
Tstg
Ratings
360
10
4
50
2.13
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
°C/W
°C
°C
Electrical Characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
VF 1.4 1.7 V IF = 10 A
IR ⎯ ⎯ 1 μA VR = 360 V
trr 25 ns IF = 10A, di/dt = 100 A/μs
R07DS1067EJ0100 Rev.1.00
Apr 24, 2013
Page 1 of 3
Free Datasheet http://www.datasheet4u.com/


RJU3051SDPE 데이터시트, 핀배열, 회로
RJU3051SDPE
Main Characteristics
Forward Current vs. Forward Voltage (Typical)
10
Ta = 125°C
1
25 °C
0.1
0
Pulse test
0.4 0.8 1.2 1.6 2.0
Forward Voltage VF (V)
Capacitance vs. Reverse Voltage (Typical)
100
f = 1 MHz
Tc = 25°C
10
Preliminary
Reverse Recovery Time vs. di/dt (Typical)
50
IF = 10 A
Ta = 25°C
40
30
20
10
0
0 40 80 120 160 200
di/dt (A/μs)
1
1 10 100
Reverse Voltage VR (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1 D=1
0.5
0.2
0.1
0.05
0.1 0.02
0.01
1 shot pulse
0.01
100 μ
1m
10 m
θch – c(t) = γs (t) • θj – c
θch – c = 2.13 °C/W, Tc = 25°C
100 m
1
10 100
Pulse Width PW (s)
R07DS1067EJ0100 Rev.1.00
Apr 24, 2013
Page 2 of 3
Free Datasheet http://www.datasheet4u.com/




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RJU3051SDPE diode

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RJU3051SDPE

Ultra Fast Recovery Diode - Renesas