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BAS116-AU 반도체 회로 부품 판매점

LOW LEAKAGE SWITCHING DIODES



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Pan Jit International
BAS116-AU 데이터시트, 핀배열, 회로
BAS116-AU/BAW156-AU/BAV170-AU/BAV199-AU
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
SOT-23
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current. 2pA typical at VR=75V.
• Low capacitance. 2pF max at VR=0V, f=1MHz
• Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.0084 grams
• Marking: BAS116-AU: PA,BAW156-AU:P4,BAV170-AU:P3,BAV199-AU:PB
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
Unitinch(mm)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
ABSOLUTE RATINGS (each diode)
Reverse Voltage
PA RA ME TE R
Peak Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current at t=1.0us
THERMAL CHARACTERISTICS
PA RA ME TE R
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
J u n c t i o n Te m p e r a t u r e
S t o r a g e Te m p e r a t u r e
S ym b o l
VR
V RM
IF
I FSM
S ym b o l
P TOT
RθJA
TJ
TSTG
Value
75
100
0.2
4.0
Value
250
500
-55 to 150
-55 to 150
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
SINGLE
COMMON ANODE
COMMON CATHODE
Uni ts
V
V
A
A
Uni ts
mW
OC/W
OC
OC
SERIES
STAD-DEC.07.2007
BAS116
BAW156
BAV170
BAV199
PAGE . 1
Free Datasheet http://www.datasheet4u.com/


BAS116-AU 데이터시트, 핀배열, 회로
BAS116-AU/BAW156-AU/BAV170-AU/BAV199-AU
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
To t a l C a p a c i t a nc e
Re ve rs e Re c o ve ry Ti me
S ym b o l
V (BR)
IR
VF
CJ
trr
Te s t C o nd i t i o n
IR=100 uA
VR=75 V
VR=75 V,TJ=150 OC
IF = 1 m A
IF = 1 0 m A
IF = 5 0 m A
IF = 1 5 0 m A
VR=0 V, f=1MHZ
IF=IR=10mA , RL=100
MIN.
75
-
-
-
-
-
-
-
-
TYP.
-
0.002
8.0
-
-
-
-
-
-
MAX.
-
5
80
0.9
1.0
1.1
1.25
2.0
3.0
CHARACTERISTIC CURVES (each diode)
Uni ts
V
nA
V
pF
us
10
1.0
0.1 VR=75V
0.01
0.001
0
50 100 150 200
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
1000
100
TA=-25OC
10
1.0 TA=75OC
TA=125OC
TA=25OC
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VF, Forward Voltage (V)
Fig. 2-Forward Current vs. Forward Voltage
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100
V R, Reverse Voltage ( V)
Fig. 3- Total capacitance vs. Reverse Voltage
STAD-DEC.07.2007
PAGE . 2
Free Datasheet http://www.datasheet4u.com/




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