파트넘버.co.kr RJU60C2SDPD 데이터시트 PDF


RJU60C2SDPD 반도체 회로 부품 판매점

Single Diode Fast Recovery Diode



Renesas 로고
Renesas
RJU60C2SDPD 데이터시트, 핀배열, 회로
RJU60C2SDPD
Single Diode
Fast Recovery Diode
Features
Fast reverse recovery time: trr = 70 ns typ. (at IF = 5 A, di/dt = 100 A/μs)
Low forward voltage: VF = 1.4 V typ. (at IF = 15 A)
Low reverse current: IR = 1 μA max. (at VR = 600 V)
Outline
Preliminary Datasheet
R07DS0373EJ0100
Rev.1.00
Apr 26, 2011
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
2, 4
12 3
13
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Average rectified forward current
Continuous forward current Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
VRM
Io
www.DataSheet.co.kr
IF
IF
IFSM
θj-cd
Tj
Tstg
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol
VF
IR
trr
Min
Typ
1.4
70
Ratings
600
5
15
8
60
4.0
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
A
°C/W
°C
°C
(Ta = 25°C)
Max Unit
Test conditions
2.0 V IF = 15 A
1 μA VR = 600 V
ns IF = 5 A, di/dt = 100 A/μs
R07DS0373EJ0100 Rev.1.00
Apr 26, 2011
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.net/


RJU60C2SDPD 데이터시트, 핀배열, 회로
RJU60C2SDPD
Main Characteristics
Forward Current vs. Forward Voltage (Typical)
100
10
Ta = 150 °C
25 °C
1
0.1
0
0.4 0.8 1.2 1.6 2.0
Forward Voltage VF (V)
Preliminary
Reverse Recovery Time vs. di/dt (Typical)
200
IF = 5 A
Ta = 25°C
160
120
80
40
0
0 40 80 120 160 200
di/dt (A/μs)
Capacitance vs. Reverse Voltage (Typical)
100
Ta = 25°C
10
1
0.1 1 10 100 1000
Reverse Voltage VR (V)
Thermal Impedance vs. Pulse Width
100
10
1
www.DataSheet.co.kr
0.1
Tc = 25°C
Single pulse
0.01
100 μ 1 m 10 m 100 m 1
10
Pulse Width PW (s)
R07DS0373EJ0100 Rev.1.00
Apr 26, 2011
Page 2 of 3
Datasheet pdf - http://www.DataSheet4U.net/




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RJU60C2SDPD diode

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RJU60C2SDPD

Single Diode Fast Recovery Diode - Renesas