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PDF RB225NS-40 Data sheet ( Hoja de datos )
| Número de pieza | RB225NS-40 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RB225NS-40
lApplications
General rectification
lDimensions (Unit : mm)
lFeatures
1)Cathode common dual type.(LPDS)
2)Low IR
RB225
NS40
①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
①②③
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
40
40
30
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg -40 to +150
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth (J-C)
Min.
-
-
-
Typ.
0.53
0.08
-
Max.
0.63
0.5
2.00
Unit
V
V
A
A
C
C
Unit
V
mA
°C/W
Conditions
IF=15A
VR=40V
junction to case
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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