|
ROHM Semiconductor |
Data Sheet
Schottky Barrier Diode
RB078B30S
lApplications
Swiching power supply
lFeatures
1)Power mold type.(CPD)
2)High reliability
3)Low IR
lConstruction
Silicon epitaxial planer
lDimensions (Unit : mm)
C0.5
6.5±0.2
5.1±0.2
0.1
2.3±0.2
0.1
0.5±0.1
lLand size figure (Unit : mm)
6.0
1.6 1.6
①
0.9
(1) (2) (3)
0.75
0.65±0.1
2.3±0.2 2.3±0.2
ROHM : CPD
JEITA : SC-63
① Manufacture Date
lTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
0.5±0.1
1.0±0.2
CPD 2.3 2.3
lStructure
φ 1.55±0.1
0
0.4±0.1
TL
www.DataSheet.co.kr
6.8±0.1
8.0±0.1
φ 3.0±0.1
2.7±0.2
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
30
30
5
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM
Tj
40
150
Storage temperature
Tstg -55 to +150
(*1) Business frequencies, Rating of R-load, Tc=95°C Max.
lElectrical characteristics (Tj=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF -
IR -
- 0.72
-5
Unit
V
V
A
A
C
C
Unit Conditions
V IF=5.0A
μA VR=30V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RB078B30S
Data Sheet
10
Tj=150°C
1
Tj=125°C
0.1
Tj=25°C
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10000
f=1MHz
Tj=25°C
1000
100
10
0
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
10
Tj=25°C
VR=30V
n=20pcs
1
AVE:0.14mA
0.1
0.01
IR DISPERSION MAP
1000
100
Tj=150°C
10
Tj=125°C
1
0.1
0.01
0
Tj=25°C
10 20
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
700
Tj=25°C
IF=5.0A
n=20pcs
600
AVE:619.5mV
500
www.DataSheet.co.kr
400
VF DISPERSION MAP
900
Ta=25°C
f=1MHz
VR=0V
n=10pcs
800
AVE:825.5pF
700
Ct DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
|