파트넘버.co.kr RB060M-30 데이터시트 PDF


RB060M-30 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB060M-30 데이터시트, 핀배열, 회로
Data Sheet
Schottky barrier diode
RB060M-30
Applications
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
    0.05
Land size figure (Unit : mm)
1.2
Features
1) Small power mold type.(PMDU)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
PMDU
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
www.DataSheet.co.kr
1.81±0.1
4.0±0.1
φ1.0±0.1
1.5MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
30
30
2
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
55
150
Storage temperature
Tstg 55 to 150
(*1)Tc=65°C MAX. Mounted on epoxy board. 180°Half sine wave
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF1 0.32 0.4 0.45
VF2 0.36 0.44 0.49
IR - 10 50
ESD break down voltage
ESD
7
-
-
Unit Conditions
V IF=1.0A
V IF=2.0A
μA VR=30V
kV
C=200pF , R=0
forward and reverse : 1 time
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.C
Datasheet pdf - http://www.DataSheet4U.net/


RB060M-30 데이터시트, 핀배열, 회로
RB060M-30
 
Data Sheet
10
Ta=75℃
1 Ta=125℃
Ta=150℃
0.1
Ta=25℃
1000000
100000
10000
1000
100
Ta=-25℃
10
0.01 1
0.1
0.001
0
100 200 300 400 500
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
600
0.01
0
Ta=150Ta=125
Ta=75
Ta=25
Ta=-25
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
30
470 100
Ta=25
90
Ta=25
460
IF=2A
n=30pcs
80
70
VR=30V
n=30pcs
450 60
50
440 40
30
430
AVE:449.1mV
20 AVE:7.26uA
10
420 0
VF DISPERSION MAP
IR DISPERSION MAP
1000
100
f=1MHz
10
0
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
400
390
380 Ta=25
f=1MHz
370 VR=0V
360
AVE:374.4pF
n=10pcs
350
340
330
320
310
300
Ct DISPERSION MAP
300
250
200
150
100
50
0
200
150
100
50
Ifsm 1cyc
8.3ms
AVE:68.2A
IFSM DISPERSION MAP
Ifsm
t
30
Ta=25
25
www.DataSheet.co.kr
IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5
AVE:9.8ns
0
trr DISPERSION MAP
1000
Mounted on epoxy board
IM=10mA
IF=0.5A
100 1ms time
300us
10
Rth(j-a)
Rth(j-c)
1
100
90
80
70
60
50
40
30
20
10
0
1
Ifsm
8.3m 8.3m
1cyc
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
3
2 Sin(θ180)
D=1/2
DC
1
0
1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
01234
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
5
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.C
Datasheet pdf - http://www.DataSheet4U.net/




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: ROHM Semiconductor

( rohm )

RB060M-30 diode

데이터시트 다운로드
:

[ RB060M-30.PDF ]

[ RB060M-30 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RB060M-30

Schottky barrier diode - ROHM Semiconductor



RB060M-30

Schottky Barrier Diode - ROHM Semiconductor