파트넘버.co.kr RB055L-40 데이터시트 PDF


RB055L-40 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB055L-40 데이터시트, 핀배열, 회로
Data Sheet
Schottky Barrier Diode
RB055L-40
Applications
General rectification
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
Features
1)Small power mold type.PMDS
2)Low IR
3)High reliability
Construction
Silicon epitaxial planar
52
①②
1.5±0.2
0.1±0.02
    0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
www.DataSheet.co.kr
2.9±0.1
4.0±0 .1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak 60Hz1cyc
Junction temperature
Storage temperature
VRM
VR
Io
IFSM
Tj
Tstg
(*1) Mounted on epoxyboard. 180°Half sine wave
Limits
40
40
3
40
150
40 to 150
Unit
V
V
A
A
°C
°C
φ1.55
2 .8MAX
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - - 0.65
Reverse current
IR - - 0.5
Unit Conditions
V IF=3.0A
mA VR=40V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


RB055L-40 데이터시트, 핀배열, 회로
RB055L-40
Data Sheet
10000
1000
Ta=150℃
Ta=125℃
100 Ta=75℃
10
Ta=-25℃
Ta=25℃
1
0.1
0
100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
700
10000
1000
100
10
1
0.1
0.01
0.001
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10 20 30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
40
1000
100
f=1MHz
10
1
0 10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
580 100 400
570
Ta=25℃
IF=3A
n=30pcs
90
80
70
Ta=TVa2R==52350℃V
VRn==3400pcVs
n=30pcs
390
380
370
560 60 360
Ta=25℃
f=1MHz
VR=0V
n=10pcs
550 AVE:559.6mV
50
40
350
340
30 AAVVEE:8.:167.26uA2uA
330
540
20 σ:1.9469uA
320
AVE:329.5pF
10 310
530 0 300
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
250
200
150
100
50
0
1
Ifsm 1cyc
8.3ms
AVE:117.2A
30
25
20
15
10
5
www.DataSheet.co.kr
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:8.20ns
1000
100
Ifsm
8.3ms 8.3ms
1cyc
IFSM DISPERSION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
trr DISPERSION MAP
1000
100
Mounted on epoxy board
Rth(j-a)
Rth(j-c)
10
IM=100mA
IF=1A
1
1ms time
300us
0.1
100 0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Io-Pf CHARACTERISTICS
5
4.5
4
3.5
3 D=1/2
2.5
2 Sin(θ=180)
DC
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: ROHM Semiconductor

( rohm )

RB055L-40 diode

데이터시트 다운로드
:

[ RB055L-40.PDF ]

[ RB055L-40 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RB055L-40

Schottky Barrier Diode - ROHM Semiconductor