RD1006LS 반도체 회로 부품 판매점
Ultrahigh-Speed Switching Diode
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 Sanyo Semicon Device |
www.DataSheet.co.kr
Ordering number : ENA1208
RD1006LS
SANYO Semiconductors
DATA SHEET
RD1006LS Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
Features
• High breakdown voltage (VRRM=600V).
• High reliability.
• One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
• Fast reverse recovery time.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Peak Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IOP
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤100μs, duty cycle≤50%
Sine wave 10ms
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Symbol
VR
VF
IR
trr
Conditions
IR=1mA
IF=10A
VR=600V
IF=10A, di / dt=100A/μs
Ratings
600
600
10
40
180
150
--55 to +150
Unit
V
V
A
A
A
°C
°C
min
600
Ratings
typ
max
1.6
100
50
Unit
V
V
μA
ns
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
82708SA TI IM TC-00001550 No. A1208-1/3
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Package Dimensions
unit : mm (typ)
7510-001
10.0
3.2
4.5
2.8
RD1006LS
0.9 1.2
0.75
12
2.55 2.55
0.7
1 : Cathode
2 : Anode
SANYO : TO-220FI(LS)-SB
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
190
180
170
160
IF -- VF
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage, VF -- V
IFSM -- t
IT13676
Current waveform 50Hz sine wave
IS
20ms
t
150
140
130
120
110
100
0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
IT13678
Cj -- VR
5
f=100kHz
3
2
100
7
5
3
2
10
0.1
7
5
23
5 7 1.0 2 3 5 7 10 2 3
Reverse Voltage, VR -- V
Rth(j-c) -- t
5 7 100
IT13677
3
2
1.0
7
5
3
2
0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0
Time, t -- s
2 3 5 7 10
IT13679
No. A1208-2/3
Datasheet pdf - http://ww
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RD1006LS diode
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