파트넘버.co.kr BAT42W-V 데이터시트 PDF


BAT42W-V 반도체 회로 부품 판매점

(BAT42W-V / BAT43W-V) Small Signal Schottky Diodes



Vishay Siliconix 로고
Vishay Siliconix
BAT42W-V 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
BAT42W-V, BAT43W-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• These diodes feature very low turn-on
voltage and fast switching. These devices
are protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
• These diodes are also available in the DO-35
case with the type designations BAT42 to
BAT43 and in MiniMELF SOD-80 case with the
type designations LL42 to LL43
• For general purpose applications
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT42W-V
BAT43W-V
Ordering code
BAT42W-V-GS18 or BAT42W-V-GS08
BAT43W-V-GS18 or BAT43W-V-GS08
17431
Type Marking
L2
L3
Remarks
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
tp < 1 s, δ < 0.5
Surge forward current
Power dissipation1)
tp < 10 ms
Tamb = 65 °C
1) Valid provided that electrodes are kept at ambient temperature
Symbol
VRRM
IF
IFRM
IFSM
Ptot
Value
30
2001)
5001)
41)
2001)
Unit
V
mA
mA
A
mW
Document Number 85661 For technical questions within your region, please contact one of the following:
Rev. 1.6, 05-Aug-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


BAT42W-V 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
BAT42W-V, BAT43W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tamb
Tstg
Value
3001)
125
- 55 to + 125
- 55 to + 150
Unit
K/W
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 100 µA (pulsed)
Leakage current1)
VR = 25 V
VR = 25 V, Tj = 100 °C
IF = 200 mA
IF = 10 mA
Forward voltage1)
IF = 50 mA
IF = 2 mA
IF = 15 mA
Diode capacitance
VR = 1 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
Rectification efficieny
RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V
1) Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Part
BAT42W-V
BAT42W-V
BAT43W-V
BAT43W-V
Symbol
V(BR)
IR
IR
VF
VF
VF
VF
VF
CD
trr
ηv
Min
30
260
80
Typ. Max Unit
V
0.5 µA
100 µA
1000
mV
400 mV
650 mV
330 mV
450 mV
7 pF
5 ns
%
250
200
150
100
50
0
0
18442
50 100 150 200
Tamb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
1000
100
125 °C
10
1
- 40 °C
25 °C
0.1
0.01
0 200 400 600 800 1000 1200
18443
VF - Instantaneous Forward Voltage (mV)
Figure 2. Typical Forward Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85661
Datasheet pdf - http://www.DataSheet4U.net/




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