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BAS70-06-V 반도체 회로 부품 판매점

(BAS70-00-V - BAS70-06-V) Small Signal Schottky Diodes



Vishay Siliconix 로고
Vishay Siliconix
BAS70-06-V 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
BAS70-00-V
3
BAS70-04-V
3
Top View
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
12
BAS70-05-V
3
12
BAS70-06-V
3
Top View
1
18439
2
12
Part
Ordering code
Type Marking
Remarks
BAS70-00-V
BAS70-00-V-GS18 or BAS70-00-V-GS08 73 Tape and Reel
BAS70-04-V
BAS70-04-V-GS18 or BAS70-04-V-GS08 74 Tape and Reel
BAS70-05-V
BAS70-05-V-GS18 or BAS70-05-V-GS08 75 Tape and Reel
BAS70-06-V
BAS70-06-V-GS18 or BAS70-06-V-GS08 76 Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation1)
tp < 1 s
1) Device on fiberglass substrate, see layout on next page
Symbol
VRRM = VRWM = VR
IF
IFSM
Ptot
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1) Device on fiberglass substrate, see layout on next page
Symbol
RthJA
Tj
Tstg
Value
70
2001)
6001)
2001)
Value
5001)
125
- 65 to + 150
Unit
V
mA
mA
mW
Unit
K/W
°C
°C
Document Number 85702 For technical questions within your region, please contact one of the following:
Rev. 1.8, 05-Aug-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


BAS70-06-V 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 μA (pulsed)
Leakage current
VR = 50 V
Forward voltage
IF = 1.0 mA
Forward voltage1)
IF = 15 mA,
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA,
RL = 100 Ω
1) Pulse test; tp 300 μs
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Symbol
V(BR)
IR
VF
VF
CD
trr
Min
70
Typ.
20
1.5
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Max
100
410
1000
2
5
Unit
V
nA
mV
mV
pF
ns
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85702
Datasheet pdf - http://www.DataSheet4U.net/




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BAS70-06-V diode

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