(PDF) 130NDD Datasheet - Diode-Diode Modules

Número de pieza	130NDD
Descripción	Diode-Diode Modules
Fabricantes	Naina Semiconductor
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No Preview Available ! Naina Semiconductor Ltd. Diode – Diode Module Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance 130NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = 850C IF(AV) 130 A Maximum average RMS forward current IF(RMS) 204 A Maximum non-repetitive surge current @ t = 10ms Maximum I2t for fusing @ t = 10ms IFSM I2t 3600 53 A kA2s M2 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Symbol Operating junction temperature range TJ Thermal resistance, junction to case Rth(JC) Values -65 to +125 0.2 Units 0C 0C/W Electrical Characteristics (TA = 25OC unless otherwise noted) Parameter Maximum average on-state current, 1800C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage Symbol IT(max) VRRM VFM VISO Values 130 200 to 1600 1.35 2500 Units A V V V 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com 1 page

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