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Infineon Technologies |
3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
IDD04SG60C
600 V
4.5 nC
4A
Type
IDD04SG60C
Package
PG-TO252-3
Marking
D04G60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
∫i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V RRM
dv/ dt
T j=25 °C
VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature, reflow
soldering (max)
T j, T stg
T sold
reflow MSL1
Value
4
18
13.5
120
1.8
0.93
600
50
43
-55 ... 175
260
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.4
page 1
2013-02-11
Parameter
Symbol Conditions
IDD04SG60C
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
- 3.5 K/W
- 75
50 -
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time3)
Total capacitance
V DC I R=0.05 mA, T j=25 °C 600
-
-V
V F I F=4 A, T j=25 °C
- 2.1 2.3
I F=4 A, T j=150 °C
- 2.8 -
IR
V R=600 V, T j=25 °C
-
0.3 25 µA
V R=600 V, T j=150 °C
-
1.3 270
Q c V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
t c T j=150 °C
C V R=1 V, f =1 MHz
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
-
-
-
-
-
4.5 - nC
- <10 ns
80 - pF
10 -
10 -
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4) Under worst case Zth conditions.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
6) Only capacitive charge occuring, guaranteed by design.
Rev. 2.4
page 2
2013-02-11
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