파트넘버.co.kr IDC08S120E 데이터시트 PDF


IDC08S120E 반도체 회로 부품 판매점

Schottky Diode



Infineon Technologies 로고
Infineon Technologies
IDC08S120E 데이터시트, 핀배열, 회로
1200V thinQ!TM SiC Schottky Diode
IDC08S120E
Features:
Applications:
Revolutionary Semiconductor Material -
Silicon Carbide
Motor Drives / Solar Inverters
High Voltage CCM PFC
Switching Behaviour Benchmark
Switch Mode Power Supplies
No Reverse Recovery / No Forward
Recovery
High Voltage Multipliers
Temperature Independent Switching
Behaviour
www.QDautaaSlhifeieet4dU.Anectcording to JEDEC1) Based on
Target Applications
A
C
Chip Type
IDC08S120E
VBR
IF
Die Size
1200V 7.5A 2.012 x 2.012 mm2
Package
sawn on foil
Mechanical Parameters
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.012 x 2.012
1.476 x 1.476
mm2
4.05
362 µm
100 mm
1652
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009


IDC08S120E 데이터시트, 핀배열, 회로
IDC08S120E
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current,
limited by Tvjmax
Surge non repetitive forward current,
sine halfwave
VRRM
VDC
IF
IF,SM
Repetitive peak forward current,
limited by thermal resistance Rth
Non-repetitive peak forward current
IF,RM
IF,max
i 2 t value
i2 dt
Operating junction and storage
temperature range
Tvj ,
Tstg
Condition
T v j =25 °C
Tvj < 150°C
TC =25° C , tP =10 ms
TC =150° C , tP =10 ms
TC = 100° C , Tvj = 1 5 0 ° C ,
D=0.1
TC =25° C , t P = 1 0 µs
TC =25° C , tP =10 ms
TC =150° C , tP =10 ms
Value
1200
1200
7.5
39
33
32
160
7
5
-55...+175
Unit
V
A
A2s
°C
Static Characteristics (tested on wafer)
Parameter
Symbol
Conditions
Reverse current
Diode forward voltage
IR
VF
V R = 1 2 0 0 V , Tvj = 2 5 ° C
I F = 7 . 5 A , Tvj = 2 5 ° C
Value
Unit
min. Typ. max.
8 180 µA
1.6 1.8 V
Static Characteristics (not subject to production test - verified by design / characterization)
Parameter
Symbol
Conditions
Value
min. Typ. max.
Reverse current
IR
V R = 1 2 0 0 V , Tvj = 1 5 0 ° C
30 1000
Diode forward voltage
VF
I F = 7 .5 A , Tvj = 1 5 0 ° C
2.5 3
Unit
µA
V
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Infineon Technologies

( infineon )

IDC08S120E diode

데이터시트 다운로드
:

[ IDC08S120E.PDF ]

[ IDC08S120E 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IDC08S120E

Schottky Diode - Infineon Technologies