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Infineon Technologies |
1200V thinQ!TM SiC Schottky Diode
IDC08S120E
Features:
Applications:
• Revolutionary Semiconductor Material -
Silicon Carbide
• Motor Drives / Solar Inverters
• High Voltage CCM PFC
• Switching Behaviour Benchmark
• Switch Mode Power Supplies
• No Reverse Recovery / No Forward
Recovery
• High Voltage Multipliers
• Temperature Independent Switching
Behaviour
w• ww.QDautaaSlhifeieet4dU.Anectcording to JEDEC1) Based on
Target Applications
A
C
Chip Type
IDC08S120E
VBR
IF
Die Size
1200V 7.5A 2.012 x 2.012 mm2
Package
sawn on foil
Mechanical Parameters
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.012 x 2.012
1.476 x 1.476
mm2
4.05
362 µm
100 mm
1652
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current,
limited by Tvjmax
Surge non repetitive forward current,
sine halfwave
VRRM
VDC
IF
IF,SM
Repetitive peak forward current,
limited by thermal resistance Rth
Non-repetitive peak forward current
IF,RM
IF,max
i 2 t value
∫ i2 dt
Operating junction and storage
temperature range
Tvj ,
Tstg
Condition
T v j =25 °C
Tvj < 150°C
TC =25° C , tP =10 ms
TC =150° C , tP =10 ms
TC = 100° C , Tvj = 1 5 0 ° C ,
D=0.1
TC =25° C , t P = 1 0 µs
TC =25° C , tP =10 ms
TC =150° C , tP =10 ms
Value
1200
1200
7.5
39
33
32
160
7
5
-55...+175
Unit
V
A
A2s
°C
Static Characteristics (tested on wafer)
Parameter
Symbol
Conditions
Reverse current
Diode forward voltage
IR
VF
V R = 1 2 0 0 V , Tvj = 2 5 ° C
I F = 7 . 5 A , Tvj = 2 5 ° C
Value
Unit
min. Typ. max.
8 180 µA
1.6 1.8 V
Static Characteristics (not subject to production test - verified by design / characterization)
Parameter
Symbol
Conditions
Value
min. Typ. max.
Reverse current
IR
V R = 1 2 0 0 V , Tvj = 1 5 0 ° C
30 1000
Diode forward voltage
VF
I F = 7 .5 A , Tvj = 1 5 0 ° C
2.5 3
Unit
µA
V
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
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