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Infineon Technologies |
Low VF Schottky Diode
• Forward current: 0.5 A
• Reverse voltage: 30 V
• Very low forward voltage
(typ. 0.45 V @ IF = 0.5 A)
• For low loss, fast-recovery protecting
and clamping applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAS3005A...
BAS3005A-02V
Type
BAS3005A-02V*
* Preliminary data
Package
SC79
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)
VR
IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
I FRM
(tp ≤ 1 ms, D ≤ 0.25)
Non-repetitive peak surge forward current
I FSM
(t ≤ 10 ms)
Junction temperature
Tj
www.DOaptaeShraeetti4nUg.ctoemmperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
2For TA > 25 °C the derating of VR and IF has to be considered.
Marking
2
Value
30
500
500
3.5
5
150
-55 ... 125
-65 ... 150
Unit
V
mA
mA
A
°C
1 2007-04-19
BAS3005A...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
tbd
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
IR
VR = 5 V
- - 15
VR = 10 V
- - 30
VR = 30 V
- - 300
Forward voltage2)
VF
IF = 1 mA
- 200 260
IF = 10 mA
- 260 310
IF = 100 mA
- 340 390
IF = 500 mA
- 450 500
Unit
µA
mV
AC Characteristics
Diode capacitance
CT -
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
10 15 pF
www.DataSheet4U.com
2 2007-04-19
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