파트넘버.co.kr L239 데이터시트 PDF


L239 반도체 회로 부품 판매점

Fast Recovery Epitaxial Diode (FRED)



ETC 로고
ETC
L239 데이터시트, 핀배열, 회로
Fast Recovery
Epitaxial Diode (FRED)
DSEI 60
IFAVM = 69 A
VRRM = 200 V
trr = 35 ns
VRSM
V
200
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
Md
Weight
Symbol
IR
VF
VT0
rT
RthJC
RthCK
RthJA
trr
IRM
VRRM
V
200
Type
DSEI 60-02A
A C TO-247 AD
C
A
A = Anode, C = Cathode
C
Test Conditions
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
Mounting torque
Maximum Ratings
98
69
800
600
650
540
580
1800
1770
1460
1410
-40...+150
150
-40...+150
150
0.8...1.2
6
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
°C
°C
°C
W
Nm
g
Test Conditions
Characteristic Values
typ. max.
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
0.25
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 60 A; -diF/dt = 200 A/ms
L £ 0.05 mH; TVJ = 100°C
35
8
50
40
11
0.88
1.08
0.70
4.0
0.75
35
50
10
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
Features
q International standard package
JEDEC TO-247 AD
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Anti saturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
q Operating at lower temperature or
space saving by reduced cooling
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2


L239 데이터시트, 핀배열, 회로
DSEI 60, 200V
160
A
140
120
IF
100
80
TVJ=150°C
60
TVJ=100°C
40
20
TVJ=25°C
0
0.0 0.4 0.8 1.2 V
VF
Fig. 1 Forward current I versus V
FF
0.8
µC
Qr
0.6
0.4
TVJ= 100°C
VR = 100V
IF= 35A
IF= 70A
IF=140A
0.2
30
A
25
IRM
TVJ= 100°C
VR = 100V
20
IF= 35A
15 IF= 70A
IF=140A
10
5
0.0
10
100 A/ms 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Q
r
versus -diF/dt
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current I
RM
versus -diF/dt
1.6
1.4
Kf
1.2
1.0
0.8
0.6
0.4
IRM
Qr
70
ns
60
trr 50
40
30
20
10
TVJ= 100°C
VR = 100V
IF=35A
IF=70A
IF=140A
5
V
VFR 4
3
tfr
2
1
2.5
TVJ= 100°C
IF = 100A
µs
2.0
tfr
VFR
1.5
1.0
0.5
0.2
0
40 80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
0
0 200 400 600 A8/0m0s
-diF/dt
Fig. 5 Typ. recovery time trr
versus -diF/dt
1000
0 0.0
0 200 400 600 A8/m0s0
diF/dt
Fig. 6 Typ peak forward voltage
VFR and tfr versus diF/dt
1.0
K/W
0.8
ZthJC
0.6
Dimensions
0.4
0.2
0.0
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal impedance junction to case
DSEI 60-02
s 10
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 2.2 2.54
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
© 2000 IXYS All rights reserved
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