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Diotec Semiconductor |
Silicon Press-Fit-Diodes
Dimensions / Maße in mm
KYZ 35A05 ... KYZ 35A6
KYZ 35K05 ... KYZ 35K6
Silizium-Einpreßdioden
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…600 V
Metal press-fit case with glass seal
Metall-Einpreßgehäuse mit Glasdurchführung
Weight approx. – Gewicht ca.
10 g
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
VRRM [V]
KYZ 35A05
KYZ 35K05
50
KYZ 35A1
KYZ 35K1
100
KYZ 35A2
KYZ 35K2
200
KYZ 35A3
KYZ 35K3
300
KYZ 35A4
KYZ 35K4
400
KYZ 35A6
KYZ 35K6
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t <10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Maximum pressure – Maximaler Einpreßdruck
IFAV 35 A
IFRM 110 A 1)
IFSM 360 / 400 A
i2t 660 A2s
Tj – 50...+175 /C
TS – 50...+175 /C
7 kN
1) Max. case temperature TC = 150/C – Max. Gehäusetemperatur TC = 150
88
28.02.2002
KYZ 35A05 ... KYZ 35A6
KYZ 35K05 ... KYZ 35K6
Characteristics
Forward voltage – Durchlaßspannung
Tj = 25/C
Leakage current – Sperrstrom
Tj = 25/C
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
IF = 35 A
VR = VRRM
Kennwerte
VF < 1.1 V
IR < 100 :A
RthC < 0.8 K/W
New - Neu
KYZ 35K05
KYZ 35K1
KYZ 35K2
KYZ 35K3
KYZ 35K4
28.02.2002
Replacements / Ersatztypen
Old - Alt
New - Neu
KYZ70/35 Pin
KYZ 35A05
KYZ71/35 Pin
KYZ 35A1
KYZ72/35 Pin
KYZ 35A2
KYZ73/35 Pin
KYZ 35A3
KYZ74/35 Pin
KYZ 35A4
Old - Alt
KYZ 75/35 Pin
KYZ 76/35 Pin
KYZ 77/35 Pin
KYZ 78/35 Pin
KYZ 79/35 Pin
89
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