(PDF) RB225T-40 Datasheet - Schottky Barrier Diode

Número de pieza	RB225T-40
Descripción	Schottky Barrier Diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! www.DataSheet4U.com Schottky Barrier Diode RB225T-40 Applications Switching power supply Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Dimensions(Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Construction Silicon epitaxial planer ① 1.2 1.3 0.8 (1) (2) (3) ROHM : ＴO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 Structure (1) (2) (3) Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current(1) Forward current surge peak （60Hz・1cyc）(1) Junction temperature Storage temperature (*1)Tc=105Cmax Per chip:Io/2 Symbol VRM VR Io IFSM Tj Tstg Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Thermal impedance ( ) : tentative Symbol VF IR θjc Limits 40 40 30 100 150 -40 to +150 Min. Typ. Max. - - 0.63 - - 500 - - (1.75) Unit V V A A C C Unit V μA C/W Conditions IF=15A VR=40V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A 1 page

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PDF RB225T-40 Data sheet ( Hoja de datos )