파트넘버.co.kr RF071L4S 데이터시트 PDF


RF071L4S 반도체 회로 부품 판매점

Super Fast Recovery Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RF071L4S 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Super Fast Recovery Diode
RF071L4S
Series
Standard Fast Recovery
Dimensions(Unit : mm)
Applications
General rectification
Features
1)Small power mold type.(PMDS)
2)high switching speed
3)Low forward voltage
Land size figure(Unit : mm)
2.0
PMDS
Structure
Construction
Taping dimensions(Unit : mm)
Silicon epitaxial planer
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Limits
D0.5
400
Direct voltage
400
Glass epoxy substrate mounted Tl=120C
1
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
15
150
-55to+150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
VF
Reverse current
Reverse recovery time
Thermal resistance
IR
trr
Rth(j-l)
Conditions
IF=0.7A
VR=400V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min. Typ.
-1
- 0.01
- 20
--
Max.
1.25
10
25
23
Unit
V
μA
ns
C/W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A


RF071L4S 데이터시트, 핀배열, 회로
RF071L4S
Electrical characteristics curves
 
Data Sheet
www.DataSheet4U.com
10
Tj=125C
1
Tj=150C
0.1
Tj=25C
0.01 Tj=75C
1000
100
10
1
0.001
0
1100
1050
500
1000
1500
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
2000
0.1
0
IF=0.7A
Tj=25C
n=30pcs
10
1000
1
950 AVE : 980.8mV
900
VF DISPERSION MAP
0.1
Tj=150C
Tj=125C
Tj=75C
100
10
f=1MHz
Tj=25C
100 200 300
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
400
Tj=25C
VR=400V
n=30pcs
AVE : 4.2nA
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : V R(V)
VR-Ct CHARACTERISTICS
40
f=1MHz
VR=0V
Tj=25C
30
AVE : 29.2pF
20
IR DISPERSION MAP
10
Ct DISPERSION MAP
80
60
40
20
0
100
10
1
1
Ifsm 1cyc
8.3ms
AVE : 41.2A
IFSM DISRESION MAP
Ifsm
t
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
30
25
20
15
10
5
0
30
25
20
15
10
5
0
AVE : 20.1ns
IF=0.5A
IR=1A
Irr=0.25*IR
Tj=25C
trr DISPERSION MAP
AVE : 14.1kV
AVE : 3.40kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000 IM=10mA
IF=100mA
100 1ms time
300s
Rth(j-a)
10 Rth(j-l)
1
On Glass Epoxi Board
0.1
0.001
0.01 0.1 1 10
TIME : t(s)
Rth-t CHARACTERISTICS
100
1000
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.A




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RF071L4S diode

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RF071L4S

Super Fast Recovery Diode - ROHM Semiconductor