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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
BAT854W series
Schottky barrier (double) diodes
Product specification
2001 Feb 27
Philips Semiconductors
Schottky barrier (double) diodes
FEATURES
• Very low forward voltage
• Very low reverse current
• Guard ring protected
• Very small SMD plastic package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption
applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN
BAT854W
1
2
3
BAT854AW
1
2
3
BAT854CW
1
2
3
BAT854SW
1
2
3
SYMBOL
a
n.c.
k
k1
k2
a1,a2
a1
a2
k1, k2
a1
k2
k1, a2
MARKING
TYPE NUMBER
BAT854W
BAT854AW
BAT854CW
BAT854SW
MARKING
CODE
81
82
83
84
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 Simplified outline
SOT323 and pin
configuration.
Product specification
www.DataSheet4U.com
BAT854W series
3
12
n.c.
MLC357
Fig.2 BAT854W single diode
configuration (symbol).
3
12
MLC360
Fig.3 BAT854AW diode
configuration (symbol).
3
12
MLC359
Fig.4 BAT854CW diode
configuration (symbol).
3
12
MLC358
Fig.5 BAT854SW diode
configuration (symbol).
2001 Feb 27
2
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