1SS118 반도체 회로 부품 판매점
Silicon Epitaxial Planar Diode
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 Hitachi Semiconductor |
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1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
Features
• High average forward current. (IO = 200mA)
• High reliability with glass seal.
Ordering Information
Type No.
1SS118
Cathode band
Black
Mark
S118
Outline
ADE-208-297 (Z)
Rev. 0
Package Code
DO-35
S1
1 18
2
Type No.
Cathode band
1. Cathode
2. Anode
1SS118
Absolute Maximum Ratings (Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Note: Value at duration of 1µs
Symbol
VRM
VR
I FM
I FSM *
IO
Pd
Tj
Tstg
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Value
75
50
600
4
200
500
175
–65 to +175
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Reverse recovery time
VF
IR
C
t rr
— — 1.0 V
IF = 10mA
— — 0.1 µA VR = 50V
— — 3.5 pF VR = 0V, f = 1MHz
— — 3.0 ns IF = 10mA, VR = 6V, Irr = 0.1IR,
RL = 50Ω
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제조업체: Hitachi Semiconductor
( hitachi )
1SS118 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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