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LC03-6R2 반도체 회로 부품 판매점

Low cap. diode array



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ON Semiconductor
LC03-6R2 데이터시트, 핀배열, 회로
LC03−6R2
Low Capacitance Surface
Mount TVS for High−Speed
Data Interfaces
The LC03−6 transient voltage suppressor is designed to protect
equipment attached to high speed communication lines from ESD,
EFT, and lighting.
Features:
SO−8 Package
Peak Power − 2000 Watts 8 x 20 mS
ITU K.20 IPP = 40 A (5/310 ms)
Bellcore 1089 (Intra−Building) 100 A (2/10 ms)
ESD Rating:
IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000−4−4 (EFT) 40 A (5/50 ns)
IEC 61000−4−5 (lighting) 95 A (8/20 ms)
UL Flammability Rating of 94V−0
Typical Applications:
High Speed Communication Line Protection
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation
8 x 20 mS @ TA = 25°C (Note 1)
Peak Pulse Current
(8 x 20 mS Waveform)
Ppk
2000
W
IPP 100 A
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150 °C
Lead Solder Temperature −
Maximum 10 Seconds Duration
TL 260 °C
1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform
www.DataSheet4U.com
http://onsemi.com
SO−8 LOW CAPACITANCE
VOLTAGE SUPPRESSOR
2 kW PEAK POWER
6 VOLTS
PIN CONFIGURATION
AND SCHEMATIC
18
27
36
45
8
1
SO−8
CASE 751
PLASTIC
MARKING DIAGRAM
LC036
LYWW
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
LC036= Device Code
L = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
LC03−6R2
SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
LC03−6R2/D


LC03-6R2 데이터시트, 핀배열, 회로
LC03−6R2
ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Breakdown Voltage @ It = 1.0 mA
Reverse Leakage Current @ VRWN = 5.0 Volts
Maximum Clamping Voltage @ IPP = 50 A, 8 x 20 mS
Maximum Clamping Voltage @ IPP = 100 A, 8 x 20 mS
Between I/O Pins and Ground @ VR = 0 Volts, 1.0 MHz
Between I/O Pins @ VR = 0 Volts, 1.0 MHz
Symbol
VBR
IR
VC
VC
Capacitance
Capacitance
Min
6.8
N/A
N/A
N/A
www.DataSheet4U.com
Typ Max Unit
− −V
− 20 mA
− 15 V
− 20 V
16 25 pF
8.0 12 pF
TYPICAL CHARACTERISTICS
10 16
14
8
12
6 10
8
46
2
0
−80 −60 −40 −20 0 20 40 60 80 100 120 140
T, TEMPERATURE (°C)
Figure 1. Reverse Voltage versus Temperature
4
2
0
−80 −60 −40 −20 0 20 40 60 80 100 120 140
T, TEMPERATURE (°C)
Figure 2. Reverse Leakage versus
Temperature
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0 20 40 60 80
t, TIME (ms)
Figure 3. 8 × 20 ms Pulse Waveform
20
18
16
14 8 x 20 ms Waveform
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110
IPP, PEAK PULSE CURRENT (A)
Figure 4. Clamping Voltage versus Peak Pulse
Current
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LC03-6R2 diode

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LC03-6R2

Low cap. diode array - ON Semiconductor