BAS521 반도체 회로 부품 판매점
High voltage switching diode
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 NXP Semiconductors |
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DATA SHEET
M3D319
BAS521
High voltage switching diode
Product specification
2003 Aug 12
Philips Semiconductors
High voltage switching diode
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BAS521
FEATURES
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package.
APPLICATIONS
• High speed switching
• High voltage switching.
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated
in planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage1
2
Top view
MAM408
Marking code: L4.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79), and
symbol.
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VR
VRRM
IF
IFRM
IFSM
Ptot
Tstg
Tj
Tamb
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Ts ≤ 90 °C; note 1
tp = 1 ms; δ = 0.25
tp = 1 µs; square wave; Tj = 25 °C
prior to surge
Ts ≤ 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the cathode tab.
MIN.
−
−
−
−
−
MAX.
300
300
250
1
4.5
UNIT
V
V
mA
A
A
− 500 mW
−65 +150 °C
− 150 °C
−65 +150 °C
2003 Aug 12
2
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제조업체: NXP Semiconductors
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BAS521 diode
데이터시트 다운로드 :
[ BAS521.PDF ]
[ BAS521 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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