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KEC |
SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
FEATURES
Low reverse current, low capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
VR
VR
IF
Tj
Tstg
RATING
4
4
130
150
-55 150
UNIT
V
V
mA
KDR582S
SCHOTTKY BARRIER TYPE DIODE
E
L BL
23
1
PP
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
www.DataSheet4U.com
Marking
Type Name
MC
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
Total Capacitance
Series Resistance
IR
CT
rS
TEST CONDITION
IF=0.1mA
IF=1mA
IF=10mA
VR=3V
VR=3V, TA=60
VR=0V, f=1MHz
IF=5mA, f=10kHz
MIN.
0.2
0.25
0.35
-
-
0.4
-
TYP.
-
-
-
-
-
-
-
MAX.
0.35
0.45
0.6
0.25
1.25
0.75
15
UNIT
V
A
pF
2009. 12. 9
Revision No : 0
1/2
KDR582S
CT - VR
1.0
f=1MHz
0.8
0.6
0.4
0.2
0.0
0 2 4 6 8 10
Reverse Voltage VR (V)
VF - IF
100
f=1MHz
10-1
www.DataShe1e0t-420U.com 0.1 0.2 0.3 0.4
Forward Voltage VF (V)
0.5
IR - VR
103
102
101
1000
2
4
6
Ta=25 C
8 10
Reverse Current VR (V)
2009. 12. 9
Revision No : 0
2/2
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