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Infineon |
BAR90...
Silicon Deep Trench PIN Diodes
• Optimized for low bias current antenna switches
in hand held applications
• Very low capacitance at zero volt reverse bias
at frequencies above 1GHz (typ. 0.19pF)
• Low forward resistance (typ. 1.3Ω @ IF = 3mA)
www.DataShee•t4UIm.copmroved ON / OFF mode harmonic
distortion balance
BAR90-02L
BAR90-02LRH
BAR90-07L4
BAR90-07LRH
"
,
!
,
BAR90-098L4 BAR90-099L4
BAR90-098LRH BAR90-099LRH
"!
, ,
"
,
!
,
Type
BAR90-02L*
BAR90-02LRH*
BAR90-07L4*
BAR90-07LRH*
BAR90-098L4*
BAR90-098LRH*
BAR90-099L4*
BAR90-099LRH*
* Preliminary data
Package
TSLP-2-1
TSLP-2-7
TSLP-4-4
TSLP-4-7
TSLP-4-4
TSLP-4-7
TSLP-4-4
TSLP-4-7
Configuration
single, leadless
single, leadless
parallel pair, leadless
parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
LS(nH) Marking
0.4 RT
0.4 R9
0.4 RT
0.4 T
0.4 TT
0.4 T9
0.4 TR
0.4 99
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS ≤ 133°C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Value
80
100
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
1 Nov-02-2004
BAR90...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 65
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
www.DataSheetD4UC.coCmharacteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 60 V
Forward voltage
IF = 3 mA
IF = 100 mA
V(BR)
IR
VF
80 -
-V
- - 50 nA
0.75
-
0.81
0.9
0.87
1
V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Nov-02-2004
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